Fabrication and Characterization of a Sensing Device Based on Porous Silicon

2000 ◽  
Vol 182 (1) ◽  
pp. 473-477 ◽  
Author(s):  
L. Quercia ◽  
F. Cerullo ◽  
V. La Ferrara ◽  
G. Di Francia ◽  
C. Baratto ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Fabrication And Characterization

Fabrication and characterization of thick porous silicon layers for rf circuits

2003 ◽  
Vol 108 (1-3) ◽  
pp. 117-120 ◽  
Author(s):  
S.Z. You ◽  
Y.F. Long ◽  
Y.S. Xu ◽  
Z.Q. Zhu ◽  
Y.L. Shi ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Rf Circuits ◽  
Fabrication And Characterization

Fabrication and characterization of magnetic porous silicon with curie temperature above room temperature

2017 ◽  
Vol 24 (5) ◽  
pp. 1139-1144 ◽  
Author(s):  
Mansour Aouassa ◽  
Imen Jadli ◽  
Mohammad Ali Zrir ◽  
Hassen Maaref ◽  
Ridha Mghaieth ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Curie Temperature ◽  
Room Temperature ◽  
Fabrication And Characterization

scholarly journals Fabrication and Characterization of Porous Silicon Layer Prepared by Photo-Electrochemical Etching in CH3OH:HF Solution

2013 ◽  
Vol 8 ◽  
pp. 29-36 ◽  
Author(s):  
Hasan A. Hadi ◽  
Raid A. Ismail ◽  
Nadir F. Habubi
Keyword(s):  
Porous Silicon ◽  
Electrochemical Etching ◽  
Gravimetric Method ◽  
Silicon Layer ◽  
Porous Silicon Layer ◽  
Constant Current ◽  
Theoretical Relation ◽  
Fabrication And Characterization ◽  
A Current

Porous silicon (PS) has been fabricated by Photo-electrochemical etching. Porous silicon was anodized on n-type Si in light using a current density of 20 mA/cm2 for 10 min. The porous structure formation was confirmed using XRD and AFM studies. The root mean square (RMS) roughness of the Porous silicon layer is found to be around 47.5 nm and the ten point height was 317 nm. The average of pores diameter was 419.98nm, and the grain growth is columnar with a (211) preferred orientation. The grain size of the PS was estimated from the Scherer’s formula and found to be 73 nm. All the properties of the porous silicon layer, such as porosity and the thickness depend on the anodization parameters. The porosity (P) was approximately 77%. The thickness of the layer formed during an anodization in constant current was 3.54 nm in gravimetric method, while its value was 1.77 nm by using the theoretical relation.

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